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MRF24300N - RF Power LDMOS Transistor

MRF24300N Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistor N *Channel Enhancement *Mode Lateral MOSFET This 300 W CW transistor .

MRF24300N Features

* Characterized with series equivalent large
* signal impedance parameters
* Internally matched for ease of use
* Qualified for operation at 32 Vdc
* Integrated ESD prote

MRF24300N Applications

* at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency device is targeted to replace industrial magnetrons and will provide longer life and ease of use. Typical Performance: In 2400
* 2500 MHz reference circuit, VDD = 32 Vdc Frequen

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Datasheet Details

Part number
MRF24300N
Manufacturer
NXP ↗
File Size
381.30 KB
Datasheet
MRF24300N-NXP.pdf
Description
RF Power LDMOS Transistor

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Power LDMOS Transistor NXP
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