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MRF21060LSR3 Datasheet - NXP

MRF21060LSR3 RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s.A5 vdgB., - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.01% Probability on CCDF. VBoalntsd,wIDidQth.

MRF21060LSR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Sign

MRF21060LSR3 Datasheet (393.81 KB)

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Datasheet Details

Part number:

MRF21060LSR3

Manufacturer:

NXP ↗

File Size:

393.81 KB

Description:

Rf power field effect transistors.

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MRF21060LSR3 Power Field Effect Transistors NXP

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