MRF21060LSR3, MRF21060LR3 - RF Power Field Effect Transistors

NXP

MRF21060LSR3 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Late.

MRF21060LSR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Sign

MRF21060LSR3 Applications

* with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
* Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s. A5 vdgB. , - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.01% Probability on CCDF. VBoalntsd,wIDidQth==530.084mA,

📥 Download Datasheet

MRF21060LSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21060LSR3, MRF21060LR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21060LSR3, MRF21060LR3
Manufacturer: NXP ↗
File Size: 393.81 KB
Datasheet: MRF21060LR3-NXP.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF21060LSR3, MRF21060LR3.
Please refer to the document for exact specifications by model.

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