Part number: MRF21060LSR3
Manufacturer: NXP (https://www.nxp.com/)
File Size: 393.81KB
Download: 📄 Datasheet
Description: RF Power Field Effect Transistors
The MRF21060LSR3 is a high-power RF MOSFET transistor manufactured by NXP Semiconductors. This transistor is designed for applications requiring high power handling capacity, such as in RF amplifiers and transmitters. It operates at high frequencies and offers high power output levels. The "LSR3" denotes a specific package type and configuration for the transistor. For more detailed technical specifications and information, you may refer to the datasheet provided by NXP Semiconductors.
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* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertio.
with frequencies from
2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
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