MRF21060LSR3, MRF21060LR3 Datasheet - NXP

Datasheet Details

Part number:

MRF21060LSR3, MRF21060LR3

Manufacturer:

NXP ↗

File Size:

393.81 KB

Description:

RF Power Field Effect Transistors

Note:

This datasheet PDF includes multiple part numbers: MRF21060LSR3, MRF21060LR3.
Please refer to the document for exact specifications by model.

Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Sign

MRF21060LR3-NXP.pdf

MRF21060LSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21060LSR3, MRF21060LR3. Please refer to the document for exact specifications by model.

MRF21060LSR3, MRF21060LR3, RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz.

Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s.A5 vdgB., - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.01% Probability on CCDF.

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MRF21060LSR3 Distributor

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