MRF21010LSR1, MRF21010LR1 Datasheet - Freescale Semiconductor

MRF21010LSR1 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio and WLL applications. Typical W CDMA Performance: 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Ou.

MRF21010LSR1 Features

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Low Go

MRF21010LR1-FreescaleSemiconductor.pdf

MRF21010LSR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF21010LSR1, MRF21010LR1

Manufacturer:

Freescale Semiconductor

File Size:

428.58 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1.
Please refer to the document for exact specifications by model.

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MRF21010LSR1 MRF21010LR1 Power Field Effect Transistors Freescale Semiconductor

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