* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Low Go
MRF21010LSR1 Datasheet (428.58 KB)
MRF21010LSR1
Freescale Semiconductor
428.58 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W .
📁 Related Datasheet
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
MRF21010LR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
MRF21030LR3 RF Power Field Effect Transistors (Motorola)
MRF21030LSR3 RF Power Field Effect Transistors (Motorola)
MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF21045LR3 RF Power Field Effect Transistors (Motorola)
MRF21045LSR3 RF Power Field Effect Transistors (Motorola)
MRF21060LR3 RF Power Field Effect Transistors (NXP)
