MRF21010LSR1, MRF21010LR1 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF21010LSR1 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for W .

MRF21010LSR1 Features

* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Low Go

MRF21010LSR1 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Typical W
* CDMA Performance:
* 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz

📥 Download Datasheet

MRF21010LSR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21010LSR1, MRF21010LR1
Manufacturer: Freescale Semiconductor
File Size: 428.58 KB
Datasheet: MRF21010LR1-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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