MRF21125SR3, MRF21125R3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF21125SR3 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Late.

MRF21125SR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection

MRF21125SR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 1600 mA, Carrier W - CDMA f1 = 2112.5 MHz, fP2e=rf2o1rm22a.

📥 Download Datasheet

MRF21125SR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21125SR3, MRF21125R3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21125SR3, MRF21125R3
Manufacturer: Freescale Semiconductor
File Size: 465.60 KB
Datasheet: MRF21125R3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF21125SR3, MRF21125R3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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