MRF21125 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTORS

MRF21125, RF POWER FIELD EFFECT TRANSISTORS

Ferrite Bead (Square), Fair Rite #2743019447 9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X 22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X 100000 pF Chip Capaci

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N P C S / c e l l u l a r r a d i o a n d W L L applications.

Typi

MRF21125 Features

* rtion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6 MOTOROLA RF DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 176 f = 2110 MHz Zin 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.), 2-Carrier W-CDMA f MHz Zo