Datasheet Specifications
- Part number
- MRF21125
- Manufacturer
- Motorola
- File Size
- 381.28 KB
- Datasheet
- MRF21125_Motorola.pdf
- Description
- RF POWER FIELD EFFECT TRANSISTORS
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N<.
Features
* rtion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6 MOTOROLA RF DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 176 f = 2110 MHz Zin 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg. ), 2-Carrier W-CDMA f MHz ZoApplications
* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C NMRF21125 Distributors
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