* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Low Go
MRF21010LR1 Datasheet (428.58 KB)
MRF21010LR1
Freescale Semiconductor
428.58 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W .
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