Datasheet4U.com

MRF21010LR1 - RF Power Field Effect Transistors

Product Overview

Freescale Semiconductor

📥 Download Datasheet

MRF21010LR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF21010LR1

Datasheet Details

Part number	MRF21010LR1
Manufacturer	Freescale Semiconductor
File Size	428.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF21010LR1 Datasheet
Additional preview pages of the MRF21010LR1 datasheet.

Product details

Features

High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large--Signal Impedance Parameters.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 3.

📁 Similar Datasheet

MRF21030LR3 - RF Power Field Effect Transistors (Motorola)
MRF21030LSR3 - RF Power Field Effect Transistors (Motorola)
MRF21030R3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF21030SR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF21045LR3 - RF Power Field Effect Transistors (Motorola)
MRF21045LSR3 - RF Power Field Effect Transistors (Motorola)
MRF21060LR3 - RF Power Field Effect Transistors (NXP)
MRF21060LSR3 - RF Power Field Effect Transistors (NXP)

Other Datasheets by Freescale Semiconductor

MRF21010LSR1 - RF Power Field Effect Transistors
MRF21120R6 - RF Power Field Effect Transistor
MRF21125R3 - RF Power Field Effect Transistors
MRF21125SR3 - RF Power Field Effect Transistors
MRF284LR1 - RF Power Field Effect Transistors
MRF284LSR1 - RF Power Field Effect Transistors

Published: May 10, 2018 |