MRF21010LR1 - RF Power Field Effect Transistors
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN PCS/cellular radio and WLL applications.
Typical W CDMA Performance: 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Ou
MRF21010LR1 Features
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Low Go
