Datasheet4U Logo Datasheet4U.com

MRF21030LR3 Datasheet - Motorola

MRF21030LR3 RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power 3.5 Watts Pow.

MRF21030LR3 Features

* .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B T A

MRF21030LR3 Datasheet (579.06 KB)

Preview of MRF21030LR3 PDF
MRF21030LR3 Datasheet Preview Page 2 MRF21030LR3 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF21030LR3

Manufacturer:

Motorola

File Size:

579.06 KB

Description:

Rf power field effect transistors.

📁 Related Datasheet

MRF21030LSR3 RF Power Field Effect Transistors (Motorola)

MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)

MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)

MRF21010LR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)

MRF21010LSR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)

MRF21045LR3 RF Power Field Effect Transistors (Motorola)

MRF21045LSR3 RF Power Field Effect Transistors (Motorola)

MRF21060LR3 RF Power Field Effect Transistors (NXP)

TAGS

MRF21030LR3 Power Field Effect Transistors Motorola

MRF21030LR3 Distributor