* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Sign
MRF21060LR3 Datasheet (393.81 KB)
MRF21060LR3
393.81 KB
Rf power field effect transistors.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Late.
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