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MRF21060LR3 - RF Power Field Effect Transistors

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NXP

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MRF21060LR3 RF Power Field Effect Transistors by NXP - Datasheet Preview — Datasheet preview – MRF21060LR3

Datasheet Details

Part number	MRF21060LR3
Manufacturer	NXP
File Size	393.81 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF21060LR3 Datasheet
Additional preview pages of the MRF21060LR3 datasheet.

Product details

Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.

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Published: May 18, 2019 |