Datasheet Details
Part number:
MRF21060LR3
Manufacturer:
File Size:
393.81 KB
Description:
RF Power Field Effect Transistors
Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Sign
MRF21060LR3, RF Power Field Effect Transistors
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz.
Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s.A5 vdgB., - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.01% Probability on CCDF.
VBoalntsd,wIDidQth
MRF21060LR3 Distributor
📁 Related Datasheet
📌 All Tags
