* Advanced GaN on SiC, for optimal thermal performance
* Characterized for CW, long pulse (up to several seconds) and short pulse operations
* Device can be used in a single
* ended or push
* pull configuration
* Input matched for simplified input circuitry
* Qualifie
MRF24G300HS Datasheet (259.58 KB)
MRF24G300HS
259.58 KB
Rf power gan transistors.
NXP Semiconductors Technical Data
RF Power GaN Transistors
These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) .
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