MRF282ZR1 - RF Power Field Effect Transistors
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev.
15, 5/2006 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
Specified Two Tone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts PEP Powe
MRF282ZR1 Features
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* RoHS Compliant
* Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati
