Datasheet4U Logo Datasheet4U.com

MRF282ZR1 Datasheet - NXP

MRF282ZR1 RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. Specified Two Tone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts PEP Powe.

MRF282ZR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* RoHS Compliant

* Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati

MRF282ZR1 Datasheet (545.73 KB)

Preview of MRF282ZR1 PDF

Datasheet Details

Part number:

MRF282ZR1

Manufacturer:

NXP ↗

File Size:

545.73 KB

Description:

Rf power field effect transistors.

📁 Related Datasheet

MRF282Z LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)

MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)

MRF282SR1 RF Power Field Effect Transistors (NXP)

MRF281SR1 RF POWER FIELD EFFECT TRANSISTORS (Motorola)

MRF281ZR1 RF POWER FIELD EFFECT TRANSISTORS (Motorola)

MRF284 RF Power Field-Effect Transistors (Motorola)

MRF284LR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF284LSR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF284S RF Power Field-Effect Transistors (Motorola)

MRF286 The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors (Motorola)

TAGS

MRF282ZR1 Power Field Effect Transistors NXP

Image Gallery

MRF282ZR1 Datasheet Preview Page 2 MRF282ZR1 Datasheet Preview Page 3

MRF282ZR1 Distributor