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MRF282ZR1, MRF282SR1 Datasheet - NXP

MRF282ZR1 - RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev.

15, 5/2006 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz.

Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Specified Two Tone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts PEP Powe

MRF282ZR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* RoHS Compliant

* Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati

MRF282SR1-NXP.pdf

This datasheet PDF includes multiple part numbers: MRF282ZR1, MRF282SR1. Please refer to the document for exact specifications by model.
MRF282ZR1 Datasheet Preview Page 2 MRF282ZR1 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF282ZR1, MRF282SR1

Manufacturer:

NXP ↗

File Size:

545.73 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF282ZR1, MRF282SR1.
Please refer to the document for exact specifications by model.

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