MRF282ZR1, MRF282SR1 - RF Power Field Effect Transistors

NXP

MRF282ZR1 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev.15, 5/2006 RF Power Field Effect Transi.

MRF282ZR1 Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* RoHS Compliant
* Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati

MRF282ZR1 Applications

* with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
* Specified Two
* Tone Performance @ 2000 MHz, 26 Volts Output Power
* 10 Watts PEP Power Gain
* 10.5 dB Efficiency
* 28% Intermodulation Distortion

📥 Download Datasheet

MRF282ZR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF282ZR1, MRF282SR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF282ZR1, MRF282SR1
Manufacturer: NXP ↗
File Size: 545.73 KB
Datasheet: MRF282SR1-NXP.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF282ZR1, MRF282SR1.
Please refer to the document for exact specifications by model.

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