* 0 13 IDQ = 400 mA G pe , POWER GAIN (dB) 12 300 mA
* 30 200 mA 11 10 9 100 mA 8 0.1 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power
MRF284S
Motorola
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Rf power field-effect transistors.
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SEMICONDUCTOR TECHNICAL DATA
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The RF Sub
*Micron MOSFET Line
RF Power Field Ef.
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