MRF284LSR1, MRF284LR1 Datasheet - Freescale Semiconductor

MRF284LSR1 RF Power Field Effect Transistors

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. Specified Two - Tone Performance @ 2000 MHz, 26 Volts Ou.

MRF284LSR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

MRF284LR1_FreescaleSemiconductor.pdf

MRF284LSR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF284LSR1, MRF284LR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF284LSR1, MRF284LR1

Manufacturer:

Freescale Semiconductor

File Size:

412.47 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF284LSR1, MRF284LR1.
Please refer to the document for exact specifications by model.

MRF284LSR1 Distributor

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MRF284LSR1 MRF284LR1 Power Field Effect Transistors Freescale Semiconductor