MRF284LR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF284 Rev.17, 5/2006 RF Power Field Effect Transistors N - Channel E.
Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B 0.

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Datasheet Specifications

Part number: MRF284LR1
Manufacturer: Freescale Semiconductor
File Size: 412.47 KB
Datasheet: MRF284LR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Applications

* with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop.
* Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gai

MRF284LR1 Distributors

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MRF284LR1 Power Field Effect Transistors Freescale Semiconductor

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