* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* S
* Parameter Characterization at High Bias Levels
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume
MRF281ZR1 Datasheet (410.00 KB)
MRF281ZR1
Motorola
410.00 KB
Rf power field effect transistors.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
📁 Related Datasheet
MRF281SR1 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)
MRF282SR1 RF Power Field Effect Transistors (NXP)
MRF282Z LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)
MRF282ZR1 RF Power Field Effect Transistors (NXP)
MRF284 RF Power Field-Effect Transistors (Motorola)
MRF284LR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF284LSR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF284S RF Power Field-Effect Transistors (Motorola)
MRF286 The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors (Motorola)
