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MRF281ZR1, MRF281SR1 - RF POWER FIELD EFFECT TRANSISTORS

MRF281ZR1 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement

MRF281ZR1 Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* S
* Parameter Characterization at High Bias Levels
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume

MRF281ZR1 Applications

* with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
* Specified Two
* Tone Performance @ 1930 MHz, 26 Volts Output Power
* 4 Watts PEP Power Gain
* 11 dB Efficiency
* 30%

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF281ZR1, MRF281SR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF281ZR1, MRF281SR1
Manufacturer
Motorola
File Size
410.00 KB
Datasheet
MRF281SR1_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTORS
Note
This datasheet PDF includes multiple part numbers: MRF281ZR1, MRF281SR1.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTORS Motorola
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