Description
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement
Features
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* S
* Parameter Characterization at High Bias Levels
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume
Applications
* with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
* Specified Two
* Tone Performance @ 1930 MHz, 26 Volts
Output Power
* 4 Watts PEP Power Gain
* 11 dB Efficiency
* 30%