MRF281ZR1 Datasheet - Motorola

MRF281ZR1 RF POWER FIELD EFFECT TRANSISTORS

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. Specified Two Tone Performance @ 1930 MHz, 26 Volts Output Power 4 Watts PEP.

MRF281ZR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* S

* Parameter Characterization at High Bias Levels

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume

MRF281ZR1 Datasheet (410.00 KB)

MRF281ZR1 Datasheet Preview — Preview of MRF281ZR1 PDF

Datasheet Details

Part number:

MRF281ZR1

Manufacturer:

Motorola

File Size:

410.00 KB

Description:

Rf power field effect transistors.

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MRF281ZR1 POWER FIELD EFFECT TRANSISTORS Motorola

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