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MRF281SR1 - RF POWER FIELD EFFECT TRANSISTORS

MRF281SR1 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement

MRF281SR1 Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* S
* Parameter Characterization at High Bias Levels
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume

MRF281SR1 Applications

* with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
* Specified Two
* Tone Performance @ 1930 MHz, 26 Volts Output Power
* 4 Watts PEP Power Gain
* 11 dB Efficiency
* 30%

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Datasheet Details

Part number
MRF281SR1
Manufacturer
Motorola
File Size
410.00 KB
Datasheet
MRF281SR1_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTORS

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