MRF281SR1 - RF POWER FIELD EFFECT TRANSISTORS
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz.
Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
Specified Two Tone Performance @ 1930 MHz, 26 Volts Output Power 4 Watts PEP
MRF281SR1 Features
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* S
* Parameter Characterization at High Bias Levels
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Docume
