MRF282S Datasheet - Motorola

MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. Specified Two Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) P.

MRF282S Features

* rder 7th Order

* 70 0.1 1.0 Pout, OUTPUT POWER (WATTS) PEP 10 12 Gps

* 20 11

* 25 10 Pout = 10 W (PEP) IDQ = 75 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 IMD

* 30

* 50

* 60 9

* 35 8 16

* 40

MRF282S_Motorola.pdf

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Datasheet Details

Part number:

MRF282S

Manufacturer:

Motorola

File Size:

135.70 KB

Description:

Lateral n-channel broadband rf power mosfets.

MRF282S Distributor

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MRF282S MRF282S LATERAL N-CHANNEL BROADBAND POWER MOSFETs Motorola