MRF282S - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
Specified Two Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) P
MRF282S Features
* rder 7th Order
* 70 0.1 1.0 Pout, OUTPUT POWER (WATTS) PEP 10 12 Gps
* 20 11
* 25 10 Pout = 10 W (PEP) IDQ = 75 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 IMD
* 30
* 50
* 60 9
* 35 8 16
* 40
