MRF284 - RF Power Field-Effect Transistors
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
To be used in class A and class AB for PCN PCS/cellular radio and wireless local loop.
Specified
MRF284 Features
* 0 13 IDQ = 400 mA G pe , POWER GAIN (dB) 12 300 mA
* 30 200 mA 11 10 9 100 mA 8 0.1 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power
