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MRF21120R6 - RF Power Field Effect Transistor

Product Overview

Freescale Semiconductor

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MRF21120R6 RF Power Field Effect Transistor by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF21120R6

Datasheet Details

Part number	MRF21120R6
Manufacturer	Freescale Semiconductor
File Size	394.67 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF21120R6 Datasheet
Additional preview pages of the MRF21120R6 datasheet.

Product details

Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Document Number: MRF21120 Rev. 11, 5/2006 M.

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Published: Mar 3, 2018 |