MRF21120R6 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF21120R6 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base statio.

MRF21120R6 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

MRF21120R6 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power
* 14 Watts (Avg. ) Powe

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Datasheet Details

Part number: MRF21120R6
Manufacturer: Freescale Semiconductor
File Size: 394.67 KB
Datasheet: MRF21120R6-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

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