Part number:
MRF21120R6
Manufacturer:
Freescale Semiconductor
File Size:
394.67 KB
Description:
Rf power field effect transistor.
MRF21120R6-FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF21120R6
Manufacturer:
Freescale Semiconductor
File Size:
394.67 KB
Description:
Rf power field effect transistor.
MRF21120R6, RF Power Field Effect Transistor
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power 14 Watts (Avg.) Power Gain 11.5 dB Efficiency
MRF21120R6 Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa
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