* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa
MRF21120R6 Datasheet (394.67 KB)
MRF21120R6
Freescale Semiconductor
394.67 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base statio.
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