Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N<.
Ferrite Bead (Square), Fair Rite #2743019447 9.
Features
* rtion versus Output Power
Figure 8. Power Gain versus Output Power
MRF21125 MRF21125S MRF21125SR3 6
MOTOROLA RF DEVICE DATA
IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc)
176
f = 2110 MHz
Zin 2170 MHz
VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg. ), 2-Carrier W-CDMA f MHz Zo
Applications
* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
* P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2
* carrier W
* CDMA Performance for VDD = 28