* rtion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6 MOTOROLA RF DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 176 f = 2110 MHz Zin 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.), 2-Carrier W-CDMA f MHz Zo
MRF21125S Datasheet (381.28 KB)
MRF21125S
Motorola
381.28 KB
Rf power field effect transistors.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub
*Micron MOSFET Line
RF Power Field Effect Transistors
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