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MRF21180R6

RF Power Field Effect Transistor

MRF21180R6 Features

* >

* 5 MHz, f2 = f + 5 MHz 2

* Carrier W

* CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)

* 45 f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power 12.5 12 G ps , POWER GAIN (dB) 11.5 1

MRF21180R6 General Description

Short Ferrite Beads 30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 µF Tantalum Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 1.0 µF Tantalum Capacitors 22 µF Tantalum Capacitors Type N Flange Mounts 10 Ω, 1/8 W Chip Resistors 1.0 kΩ, 1/8 W Chip Resistor Microstrip Microstrip Microstrip .

MRF21180R6 Datasheet (520.04 KB)

Preview of MRF21180R6 PDF

Datasheet Details

Part number:

MRF21180R6

Manufacturer:

Motorola

File Size:

520.04 KB

Description:

Rf power field effect transistor.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Fi.

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MRF21180R6 Power Field Effect Transistor Motorola

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