Datasheet Details
- Part number
- MRF21180R6
- Manufacturer
- Motorola
- File Size
- 520.04 KB
- Datasheet
- MRF21180R6_Motorola.pdf
- Description
- RF Power Field Effect Transistor
MRF21180R6 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Fi.
Short Ferrite Beads 30 pF Chip Capacitors 5.
MRF21180R6 Features
* >
* 5 MHz, f2 = f + 5 MHz 2
* Carrier W
* CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
* 45
f, FREQUENCY (MHz)
Figure 5. Intermodulation Distortion versus Output Power
12.5 12 G ps , POWER GAIN (dB) 11.5 1
MRF21180R6 Applications
* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Ch
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