MRF21120 RF POWER FIELD EFFECT TRANSISTOR

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21120/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistor N .

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Datasheet Specifications

Part number: MRF21120
Manufacturer: Motorola
File Size: 385.00 KB
Datasheet: MRF21120-Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTOR

Features

* 60 40 20 0 -20 -40 -60 η, EFFICIENCY (%) ACPR (dB) Gps, POWER GAIN (dB) 13 12 Gps 11 10 η 9 8 VDD = 28 Vdc, IDQ = 2 x 500 mA f = 2170.0 MHz, f2 = 2170.1 MHz 7 IMD 6 5 0.10 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency, IMD versus Output Power 80 60 40 20 0 -20

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* W
* CDMA Performance @
* 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power
* 1

MRF21120 Distributors

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MRF21120 POWER FIELD EFFECT TRANSISTOR Motorola

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