MRF21120 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTOR

MRF21120, RF POWER FIELD EFFECT TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21120/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN PCS/cellular radio and WLL applications.

W CDMA Performance @ 45 dBc

MRF21120 Features

* 60 40 20 0 -20 -40 -60 η, EFFICIENCY (%) ACPR (dB) Gps, POWER GAIN (dB) 13 12 Gps 11 10 η 9 8 VDD = 28 Vdc, IDQ = 2 x 500 mA f = 2170.0 MHz, f2 = 2170.1 MHz 7 IMD 6 5 0.10 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency, IMD versus Output Power 80 60 40 20 0 -20