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MRF21030LSR3, MRF21030LR3 Datasheet - Motorola

MRF21030LSR3 RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power 3.5 Watts Pow.

MRF21030LSR3 Features

* .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B T A

MRF21030LR3_Motorola.pdf

This datasheet PDF includes multiple part numbers: MRF21030LSR3, MRF21030LR3. Please refer to the document for exact specifications by model.
MRF21030LSR3 Datasheet Preview Page 2 MRF21030LSR3 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF21030LSR3, MRF21030LR3

Manufacturer:

Motorola

File Size:

579.06 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF21030LSR3, MRF21030LR3.
Please refer to the document for exact specifications by model.

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MRF21030LSR3 MRF21030LR3 Power Field Effect Transistors Motorola

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