MRF21030LSR3 - RF Power Field Effect Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power 3.5 Watts Pow
MRF21030LSR3 Features
* .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B T A
