MRF21060R3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF21060R3, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz.

Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power 6.0 Watts Power Gain 12.5 dB Drain Efficie

MRF21060R3 Features

* 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M T A M B M M (INSULATOR) R M (LID) bbb N (LID) M T A B M ccc M T A M B M S M (INSULATOR) Freescale Semiconductor, Inc H ccc C T A M B M aaa M T A M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: