MRF21060SR3, MRF21060R3 RF Power Field Effect Transistors

Motorola

MRF21060SR3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Tr.

MRF21060SR3 Features

* 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M T A M B M M (INSULATOR) R M (LID) bbb N (LID) M T A B M ccc M T A M B M S M (INSULATOR) Freescale Semiconductor, Inc H ccc C T A M B M aaa M T A M B M F E A (FLANGE) A T SEATING PLANE STYLE 1:

MRF21060SR3 Applications

* with frequencies from 2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
* Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power
* 6.0 Watts Power Gain
* 12.5 dB Drain Efficiency

📥 Download Datasheet

MRF21060SR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21060SR3, MRF21060R3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21060SR3, MRF21060R3
Manufacturer: Motorola
File Size: 550.96 KB
Datasheet: MRF21060R3_Motorola.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF21060SR3, MRF21060R3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Motorola

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