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MRF1513NT1 - RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET

MRF1513NT1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev.6, 3/2005 RF Power Field Effect Transistor N *Channel Enhancement

MRF1513NT1 Features

* x 0.080″ Microstrip 1.034″ x 0.080″ Microstrip 0.202″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 1.088″ x 0.080″ Microstrip 0.149″ x 0.080″ Microstrip 0.171″ x 0.080″ Micr

MRF1513NT1 Applications

* with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large
* signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
* Specified Performance @ 520 MHz, 12.5 Volts D Output Power
* 3 Wa

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Datasheet Details

Part number
MRF1513NT1
Manufacturer
Freescale Semiconductor
File Size
467.97 KB
Datasheet
MRF1513NT1_FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET

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Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET Freescale Semiconductor
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