MRF1513NT1 - RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev.
6, 3/2005 RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz.
The high gain and broadband performance of this device make it ideal for large signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 1
MRF1513NT1 Features
* x 0.080″ Microstrip 1.034″ x 0.080″ Microstrip 0.202″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 1.088″ x 0.080″ Microstrip 0.149″ x 0.080″ Microstrip 0.171″ x 0.080″ Micr
