Datasheet Summary
RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Features
Guaranteed Performance at 30 MHz, 50 V:
- Output Power
- 150 W
- Gain
- 18 dB (22 dB Typ)
- Efficiency
- 40% Typical Performance at 175 MHz, 50 V:
- Output Power
- 150 W
- Gain
- 13 dB
- Low Thermal Resistance
- Ruggedness Tested at Rated Output Power
- Nitride Passivated Die for Enhanced Reliability
Package Outline
Description and Applications
Designed for broadband mercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
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