• Part: MRF151G
  • Description: RF Power Field-Effect Transistor
  • Category: Transistor
  • Manufacturer: MACOM Technology Solutions
  • Size: 877.96 KB
Download MRF151G Datasheet PDF
MACOM Technology Solutions
MRF151G
MRF151G is RF Power Field-Effect Transistor manufactured by MACOM Technology Solutions.
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 175 MHz, 50 V: - Output Power - 300 W - Gain - 14 dB (16 dB Typ) - Efficiency - 50% - Low Thermal Resistance - 0.35°C/W - Ruggedness Tested at Rated Output Power - Nitride Passivated Die for Enhanced Reliability Package Outline Description and Applications Designed for broadband mercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Rev. V1 M/A- Technology Solutions Inc. (MA) and its...