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MRF151G Datasheet Rf Power Field-effect Transistor

Manufacturer: MACOM Technology Solutions

Overview: MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband.

General Description

and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz.

The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Rev.

Key Features

  • Guaranteed Performance at 175 MHz, 50 V:.
  • Output Power.
  • 300 W.
  • Gain.
  • 14 dB (16 dB Typ).
  • Efficiency.
  • 50%.
  • Low Thermal Resistance.
  • 0.35°C/W.
  • Ruggedness Tested at Rated Output Power.
  • Nitride Passivated Die for Enhanced Reliability Package Outline.

MRF151G Distributor