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MRF151G - RF Power Field-Effect Transistor

General Description

Designed for broadband commercial and military applications at frequencies to 175 MHz.

The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Rev.

Key Features

  • Guaranteed Performance at 175 MHz, 50 V:.
  • Output Power.
  • 300 W.
  • Gain.
  • 14 dB (16 dB Typ).
  • Efficiency.
  • 50%.
  • Low Thermal Resistance.
  • 0.35°C/W.
  • Ruggedness Tested at Rated Output Power.
  • Nitride Passivated Die for Enhanced Reliability Package Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 175 MHz, 50 V:  Output Power — 300 W  Gain — 14 dB (16 dB Typ)  Efficiency — 50%  Low Thermal Resistance — 0.35°C/W  Ruggedness Tested at Rated Output Power  Nitride Passivated Die for Enhanced Reliability Package Outline Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Rev. V1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.