| Part Number | MRF151G Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
( DataSheet : )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF151G/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
De.
Current * Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 40 500 2.85 *65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal . |
MRF151G Datasheet and Specifications PDF
The MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET.
| Part Number | MRF151G Datasheet |
|---|---|
| Description | N-CHANNEL BROADBAND RF POWER MOSFET |
| Manufacturer | Tyco Electronics |
| Overview |
( DataSheet : )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF151G/D
The RF MOSFET Line
RF Powe r Field-E ffec t Transistor
N–Channel Enhancement–Mode MOSFET
Designed .
ymbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 40 500 2.85 * 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.35 Unit °C/W NOTE * CAUTION * MOS devices are susceptible to damage from electrostat. |
| Part Number | MRF151G Datasheet |
|---|---|
| Description | RF Power Field-Effect Transistor |
| Manufacturer | MACOM Technology Solutions |
| Overview |
and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tr.
Guaranteed Performance at 175 MHz, 50 V: * Output Power * 300 W * Gain * 14 dB (16 dB Typ) * Efficiency * 50% * Low Thermal Resistance * 0.35°C/W * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability Package Outline Description and Applications Designed for br. |