| Part Number | MRF151 Datasheet |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| Overview |
and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tr.
Guaranteed Performance at 30 MHz, 50 V: * Output Power * 150 W * Gain * 18 dB (22 dB Typ) * Efficiency * 40% Typical Performance at 175 MHz, 50 V: * Output Power * 150 W * Gain * 13 dB * Low Thermal Resistance * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliabilit. |
MRF151 Datasheet and Specifications PDF
The MRF151 is a RF Power Field-Effect Transistor.
| Part Number | MRF151 Datasheet |
|---|---|
| Description | N-CHANNEL BROADBAND RF POWER MOSFET |
| Manufacturer | Tyco Electronics |
| Overview |
( DataSheet : )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF151/D
The RF MOSFET Line
RF Powe r Field-E ffec t Transistor
N–Channel Enhancement–Mode MOSFET
Designed f.
erature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 16 300 1.71 * 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE * CAUTION * MOS devic. |
| Part Number | MRF151 Datasheet |
|---|---|
| Description | N-CHANNEL BROADBAND RF POWER MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview |
( DataSheet : )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF151/D
The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET
Desi.
e Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 16 300 1.71 * 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE * CAUTION * MOS. |