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MRF1550FNT1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Broadband - Full Power Across the Band: 135 - 175 MHz.
  • Broadband Demonstration Amplifier Information Available Upon Request.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1550NT1 MRF1550FNT1 175 MHz, 50 W, 12.5 V LATE.

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MRF1550NT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.