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MRF1550NT1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF1550NT1 datasheet PDF. This datasheet also covers the MRF1550FNT1 variant, as both devices belong to the same rf power field effect transistors n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Broadband - Full Power Across the Band: 135 - 175 MHz.
  • Broadband Demonstration Amplifier Information Available Upon Request.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1550NT1 MRF1550FNT1 175 MHz, 50 W, 12.5 V LATE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF1550FNT1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.