Datasheet Summary
( DataSheet : .. )
Freescale Semiconductor Technical Data
MRF1511 Rev. 3, 3/2005
RF Power Field Effect Transistor
N- Channel Enhancement- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, mon source amplifier applications in 7.5 volt portable FM equipment. D
- Specified Performance @ 175 MHz, 7.5 Volts Output Power
- 8 Watts Power Gain
- 11.5 dB Efficiency
- 55%
- Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive
- Excellent Thermal Stability
- Characterized with Series Equivalent Large- Signal G Impedance...