MRF1511NT1 Overview
) Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband mercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, mon source amplifier applications in 7.5 volt portable FM equipment.