Datasheet4U Logo Datasheet4U.com

MRF1511NT1 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

Key Features

  • d impedance at given output power, voltage, frequency, and ηD > 50 %. ZOL.
  • = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL.
  • was chosen based on tradeoffs between gain, drain efficiency, and device stabi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF151 RF Power Field-Effect Transistor MACOM
MRF151 N-CHANNEL BROADBAND RF POWER MOSFET Tyco Electronics
MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET Freescale Semiconductor
MRF1517NT1 RF Power Field Effect Transistor Freescale Semiconductor
MRF151A RF Power FET MA-COM

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF1511T1 RF Power Field Effect Transistor
MRF151 N-CHANNEL BROADBAND RF POWER MOSFET
MRF1513T1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
MRF1517T1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
MRF1518NT1 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 volt portable FM equipment. D • Specified Performance @ 175 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11.5 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.