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MRF1511T1 - RF Power Field Effect Transistor

Key Features

  • utput Matching Network Z in Z.
  • OL Figure 19. Series Equivalent Input and Output Impedance.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1511/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 175 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11.5 dB Efficiency — 55% D • Capable of Handling 20:1 VSWR, @ 9.