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MRF300BN Datasheet RF Power LDMOS Transistors

Manufacturer: NXP Semiconductors

Download the MRF300BN datasheet PDF. This datasheet also includes the MRF300AN variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF300AN-NXP.pdf) that lists specifications for multiple related part numbers.

Overview

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications.

The devices are extremely rugged and exhibit high performance up to 250 MHz.

Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 144 (6) 230 (7) CW Pulse (100 sec, 20% Duty Cycle) 320 CW 330 CW 330 CW 320 CW 325 CW 320 CW 330 Peak 28.1 27.4 28.2 27.3 25.1 23.0 20.4 79.7 80.0 79.0 73.0 77.5 73.0 75.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 40.68 Pulse > 65:1 at all 2 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 230 Pulse > 65:1 at all 6 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 1.

Key Features

  • D G.
  • Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration S.
  • Characterized from 30 to 50 V.
  • Suitable for linear.

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