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MRF6V2300NBR1, MRF6V2300NR1 - RF Power FET

MRF6V2300NBR1 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed primarily.

MRF6V2300NBR1 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per

MRF6V2300NBR1 Applications

* with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain
* 25.5 dB Drain Efficiency
* 68%
* Capab

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF6V2300NBR1, MRF6V2300NR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF6V2300NBR1, MRF6V2300NR1
Manufacturer
NXP ↗
File Size
1.22 MB
Datasheet
MRF6V2300NR1-NXP.pdf
Description
RF Power FET
Note
This datasheet PDF includes multiple part numbers: MRF6V2300NBR1, MRF6V2300NR1.
Please refer to the document for exact specifications by model.

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Power FET NXP
NXP MRF6V2300NBR1-like datasheet