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MRF6V2300NBR1 - RF Power FET

This page provides the datasheet information for the MRF6V2300NBR1, a member of the MRF6V2300NR1 RF Power FET family.

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V2300N Rev. 5, 4/2010 MRF6V2300NR1 MRF6V2300NBR1 10--600 MHz, 300 W, 50 V.

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Datasheet preview – MRF6V2300NBR1

Datasheet Details

Part number MRF6V2300NBR1
Manufacturer NXP
File Size 1.22 MB
Description RF Power FET
Datasheet download datasheet MRF6V2300NBR1 Datasheet
Additional preview pages of the MRF6V2300NBR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain — 25.5 dB Drain Efficiency — 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
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