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MRF6V2300NBR1 - RF Power FET

Download the MRF6V2300NBR1 datasheet PDF. This datasheet also covers the MRF6V2300NR1 variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V2300N Rev. 5, 4/2010 MRF6V2300NR1 MRF6V2300NBR1 10--600 MHz, 300 W, 50 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V2300NR1-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain — 25.5 dB Drain Efficiency — 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.