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MRFX1K80H - RF Power LDMOS Transistor

Features

  • Unmatched input and output allowing wide frequency range utilization.
  • Device can be used single--ended or in a push--pull configuration.
  • Qualified up to a maximum of 65 VDD operation.
  • Characterized from 30 to 65 V for extended power range.
  • High breakdown voltage for enhanced reliability.
  • Suitable for linear.

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Full PDF Text Transcription

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NXP Semiconductors Technical Data Document Number: MRFX1K80H Rev. 1, 09/2018 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET MRFX1K80H This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 400 MHz. Typical Performance Frequency (MHz) Signal Type VDD (V) Pout (W) Gps (dB) D (%) 27 (1) CW 65 1800 CW 27.8 75.6 64 Pulse (100 sec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 81.36 87.5–108 (2,3) CW CW 62 1800 CW 25.1 78.7 60 1600 CW 23.6 82.5 123/128 Pulse (100 sec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0 144 CW 65 1800 CW 23.5 78.0 175 CW 60 1560 CW 23.5 75.
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