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PBSS2515VPN - NPN/PNP Transistor

Description

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package.

Features

  • 300 mW total power dissipation.
  • Very small 1.6 × 1.2 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved thermal behaviour due to flat lead.
  • Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs.

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Datasheet preview – PBSS2515VPN

Datasheet Details

Part number PBSS2515VPN
Manufacturer NXP Semiconductors
File Size 98.15 KB
Description NPN/PNP Transistor
Datasheet download datasheet PBSS2515VPN Datasheet
Additional preview pages of the PBSS2515VPN datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet Supersedes data of 2001 Nov 07 2005 Jan 11 NXP Semiconductors 15 V low VCE(sat) NPN/PNP transistor Product data sheet PBSS2515VPN FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat lead • Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs.
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