* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I
PBSS304NZ Datasheet (171.41 KB)
PBSS304NZ
171.41 KB
5.2a npn transistor.
www.DataSheet4U.com PBSS304NZ 60 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 01 18 September 2006 Product data sheet 1. Product profile .
📁 Related Datasheet
PBSS304ND 3A NPN transistor (NXP)
PBSS304NX NPN low VCEsat Breakthrough In Small Signal (BISS) transistor (NXP Semiconductors)
PBSS304NX-Q 4.7A NPN low VCEsat transistor (nexperia)
PBSS304PD PNP Transistor (NXP)
PBSS304PX PNP Transistor (nexperia)
PBSS304PZ PNP Transistor (nexperia)
PBSS301ND 4A NPN transistor (NXP)
PBSS301NX 5.3A NPN transistor (nexperia)
PBSS301NZ 5.8A NPN transistor (nexperia)
PBSS301PD PNP Transistor (NXP)
