* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I
PBSS306NX Datasheet (196.18 KB)
PBSS306NX
196.18 KB
4.5a npn transistor.
www.DataSheet4U.com PBSS306NX 100 V, 4.5 A NPN low VCEsat (BISS) transistor Rev. 01 21 August 2006 Product data sheet 1. Product profile 1..
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