* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s Dual
PBSS4160DS Datasheet (192.20 KB)
PBSS4160DS
192.20 KB
Npn/npn transistor.
www.DataSheet4U.com PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 02 27 June 2005 Product data sheet 1. Product profile 1..
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