* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement of medium power transistor BCP55 and BCX55. 1.3 Applications s Major applicati
PBSS4160K Datasheet (123.57 KB)
PBSS4160K
123.57 KB
1 a npn low vcesat (biss) transistor.
www.DataSheet4U.com PBSS4160K 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 29 April 2004 Objective data sheet 1. Product profile 1.1 .
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