* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency, reduces heat generation
* Reduces printed-circuit board area required
* Cost effective replacement for medium power transistor BCP55 and BCX55.
PBSS4160T Datasheet (109.51 KB)
PBSS4160T
109.51 KB
Npn transistor.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of.
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