PBSS5160V transistor equivalent, pnp low vcesat (biss) transistor.
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* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation.
* Major application segments Automotive Telecom infrastructure Industrial
* Power management DC-to-DC co.
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.
1.2 Features
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* Low collector-emitter saturation voltage VCEsat High collector current capability IC an.
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