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PBSS5420D - PNP low VCEsat (BISS) transistor

Description

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4420D.

Features

  • I Very low collector-emitter saturation resistance I Ultra low collector-emitter saturation voltage I 4 A continuous collector current I Up to 15 A peak current I High efficiency leading to less heat generation 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D. 1.2 Features I Very low collector-emitter saturation resistance I Ultra low collector-emitter saturation voltage I 4 A continuous collector current I Up to 15 A peak current I High efficiency leading to less heat generation 1.3 Applications I Power management functions I Charging circuits I DC-to-DC conversion I MOSFET gate driving I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1.
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