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PBSS8110X - NPN transistor

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.

PNP complement: PBSS9110X.

Key Features

  • SOT89 package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High efficiency leading to less heat generation 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features „ SOT89 package „ Low collector-emitter saturation voltage VCEsat „ High collector current capability: IC and ICM „ High efficiency leading to less heat generation 1.3 Applications „ Major application segments: ‹ Automotive 42 V power ‹ Telecom infrastructure ‹ Industrial „ Peripheral driver: ‹ Driver in low supply voltage applications (e.g. lamps and LEDs) ‹ Inductive load driver (e.g. relays, buzzers and motors) „ DC-to-DC converter 1.4 Quick reference data Table 1.