PESD5V0U4BF
PESD5V0U4BF is Ultra low capacitance bidirectional quadruple ESD protection arrays manufactured by NXP Semiconductors.
description
Ultra low capacitance bidirectional quadruple Electro Static Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
SOT886
PESD5V0U4BW
SOT665
JEDEC MO-252
- Package configuration leadless ultra small ultra small and flat lead
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 k V four lines
I Ultra low diode capacitance: Cd = 2.9 p F I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 n A I AEC-Q101 qualified
1.3 Applications
I puters and peripherals I Audio and video equipment
I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I munication systems
I Portable electronics I Subscriber Identity Module (SIM) card protection I Fire Wire I High-speed data lines
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM reverse standoff voltage
Cd diode capacitance f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 p F
2. Pinning information
Table 3. Pinning Pin Description
PESD5V0U4BF 1 cathode (diode 1) 2 mon cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 mon cathode 6 cathode (diode 4)
PESD5V0U4BW 1 cathode (diode 1) 2 mon cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4)
Simplified outline
Graphic symbol
65 bottom view
16 25...
