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PHB18NQ10T Datasheet, NXP

PHB18NQ10T transistor equivalent, n-channel trenchmos transistor.

PHB18NQ10T Avg. rating / M : 1.0 rating-14

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PHB18NQ10T Datasheet

Features and benefits


* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DE.

Application


* d.c. to d.c. converters
* switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conve.

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
* d.c. to d.c. converters
* switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional lea.

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