PHB18NQ10T transistor equivalent, n-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance
SYMBOL
VDSS = 100 V ID = 18 A
g
RDS(ON) ≤ 90 mΩ
s
GENERAL DE.
* d.c. to d.c. converters
* switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conve.
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
* d.c. to d.c. converters
* switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional lea.
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