very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching appli.

PHB69N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total .

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protectio.

PHB69N03LT

PHB60N06LT

PHB60N06T

PHB63NQ03LT

PHB65N06LT

PHB65N06T

PHB66NQ03LT

PHB6N50E

PHB6N60E

PHB6ND50E

PHB-5R0H155-R

PHB-5R0H255-R

PHB-5R0H305-R

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