PHB6ND50E transistor equivalent, transistor.
* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Fas.
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverter.
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