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PHN203 Datasheet - NXP

Dual N-channel enhancement mode TrenchMOS transistor

PHN203 Features

* Dual device

* Low threshold voltage

* Fast switching

* Logic level compatible

* Surface mount package PHN203 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 25 V ID = 6.3 A RDS(ON) ≤ 30 mΩ (VGS = 10 V) RDS(ON) ≤ 55 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESC

PHN203 General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96-1 (SO8) surface mountin.

PHN203 Datasheet (98.60 KB)

Preview of PHN203 PDF

Datasheet Details

Part number:

PHN203

Manufacturer:

NXP ↗

File Size:

98.60 KB

Description:

Dual n-channel enhancement mode trenchmos transistor.

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PHN203 Dual N-channel enhancement mode TrenchMOS transistor NXP

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